Molecular Beam Epitaxy of Low Temperature Grown GaAs Photoconductors
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Interferometric characterization of 160 fs far-infrared light pulsesApplied Physics Letters, 1991
- Log-periodic antennas for pulsed terahertz radiationApplied Physics Letters, 1991
- Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °CApplied Physics Letters, 1991
- A mixer based electro-optic sampling system for submillivolt signal detectionReview of Scientific Instruments, 1990
- High-brightness terahertz beams characterized with an ultrafast detectorApplied Physics Letters, 1989
- Picosecond GaAs-based photoconductive optoelectronic detectorsApplied Physics Letters, 1989
- Subpicosecond photoconducting dipole antennasIEEE Journal of Quantum Electronics, 1988
- Transient response of planar integrated optoelectronic antennasApplied Physics Letters, 1987
- Subpicosecond electrooptic sampling: Principles and applicationsIEEE Journal of Quantum Electronics, 1986
- Picosecond microwave pulses generated with a subpicosecond laser-driven semiconductor switchApplied Physics Letters, 1981