High performance Q-band 0.15 mu m InGaAs HEMT MMIC LNA
- 31 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A monolithic three-stage pseudomorphic InGaAs high-electron-mobility-transistor (HEMT) low-noise amplifier is discussed. The amplifier exhibits state-of-the-art low noise and gain performance at Q-band frequencies. It exhibits 22 dB of gain with 3-dB noise figure from 41 to 45 GHz. From 35 to 50 GHz, it has a flat gain response of over 22 dB gain across the Q-band range. The amplifier uses 0.15- mu m-gate-length GaAs-based pseudomorphic HEMTs with on-chip matching circuits and bias circuits. The chip size is 2.3 mm*1.0 mm.<>Keywords
This publication has 8 references indexed in Scilit:
- A monolithic 40-GHz HEMT low-noise amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- GaAs MMICs for EHF SATCOM ground terminalsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Reliability of state-of-the-art GaAs pseudomorphic low-noise HEMTsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 44 GHz monolithic HEMT downconverterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMTIEEE Microwave and Guided Wave Letters, 1991
- W-band InGaAs HEMT low noise amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- Selectively δ-doped AlxGa1−xAs/GaAs heterostructures with high two-dimensional electron-gas concentrations n2DEG≥1.5×1012 cm−2 for field-effect transistorsApplied Physics Letters, 1987
- Improvement of two-dimensional electron gas concentration in selectively doped GaAs/N-AlGaAs heterostructures by atomic planar dopingJournal of Applied Physics, 1987