Investigation of the early stages of ZnSe epitaxy on GaAs(001) via scanning tunneling microscopy
- 13 October 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (15) , 2178-2180
- https://doi.org/10.1063/1.119373
Abstract
We present a scanning tunneling microscopy (STM) study of the initial stages of ZnSe deposition on the GaAs(001)-(2×4) surface. The deposition of elemental Se and of ZnSe on the bare GaAs surface induces considerable atomic disorder attributed to the Se–As exchange reaction. The deposition of elemental Zn weakens the 2× periodicity of the surface but induces no apparent changes in the STM images of the As dimers. Comparison of STM images of submonolayers of ZnSe on GaAs with and without a Zn pretreatment suggests that Zn reduces the interaction of Se with the GaAs surface.Keywords
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