Nanometer-Area Electron Diffraction of Interfaces of Semiconductor Superlattices
- 1 March 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (3A) , L468
- https://doi.org/10.1143/jjap.27.l468
Abstract
A new method for analyzing interfaces of semiconductor superlattices such as GaAs/Ga1-x Al x As is reported: An electron probe of 1–2 nm in size of formed in a transmission electron microscope is incident in the [100] direction on a {110} cleaved crystal of the superlattices and scanned around the interfaces like the cross-sectional observation. The nanometer-area diffraction patterns are recorded continuously by scanning the probe. The local compositional and structural information of the interfaces in the superlattices can be obtained using the method.Keywords
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