SP: an advanced surface-potential-based compact MOSFET model
- 3 February 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This work describes an advanced physics-based compact MOSFET model (SP). Both the quasi-static and non-quasistatic versions of SP are surface-potential-based. The model is symmetric, includes the accumulation region, small-geometry effects, and has a consistent current and charge formulation. The surface potential is computed analytically and there are no iterative loops anywhere in the model. Availability of the surface potential in the source-drain overlap regions enables a physics-based formulation of the extrinsic model (e.g. gate tunneling current) and allows for a noise model free of discontinuities or unphysical interpolation schemes. Simulation results are used to illustrate the interplay between the model structure and circuit design.Keywords
This publication has 7 references indexed in Scilit:
- Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact modelSolid-State Electronics, 2003
- Mosfet Models for Spice Simulation, Including BSIM3v3 and BSIM4Published by Institute of Electrical and Electronics Engineers (IEEE) ,2001
- Closed-form approximation for the perturbationofMOSFET surface potential by quantum-mechanical effectsElectronics Letters, 2000
- An improved MOSFET model for circuit simulationIEEE Transactions on Electron Devices, 1998
- MOSFET Models for VLSI Circuit SimulationPublished by Springer Nature ,1993
- A charge-sheet model of the MOSFETSolid-State Electronics, 1978
- Tunneling in a finite superlatticeApplied Physics Letters, 1973