High-quality quantum point contacts in GaN∕AlGaN heterostructures
- 8 February 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (7) , 073108
- https://doi.org/10.1063/1.1862339
Abstract
We study the transport properties of quantum point contacts in a Ga N ∕ Al Ga N heterostructure. The conductance of our devices shows well-quantized plateaus, which spin-split in high perpendicular magnetic field. The g factor is 2.55, as derived from the point contact subband splitting versus perpendicular magnetic field. In addition to the well-resolved plateaus, we also observe evidence of “0.7 structure” which has been mainly investigated in the GaAs system.Keywords
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