Zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy
- 1 February 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (3) , 1371-1377
- https://doi.org/10.1063/1.361035
Abstract
Zinc incorporation into InP grown by atmospheric pressure metalorganic vapor phase epitaxy has been studied systematically as a function of Zn source flow rate, substrate orientation, and growth temperature. Within the growth conditions for device quality layers, a Zn saturation level exists which varies with substrate orientation. The incorporation kinetics is analyzed using a surface adsorption-trapping model. We demonstrate that the Langmuir state of adsorption–desorption process is not established during growth due to the interruption of the surface processes by layer growth. The existence of a saturation level at a given growth condition indicates that Zn atoms incorporate at defect sites instead of the normal growth sites for In. Two parameters are used to characterize the properties of the surface defect, i.e., the capture cross section and the time of desorption for Zn atoms. The implication of these parameters and their substrate orientation and growth temperature dependencies are discussed.This publication has 21 references indexed in Scilit:
- Erratum: ‘‘Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition’’ [J. Appl. Phys. 73, 4095 (1993)]Journal of Applied Physics, 1994
- Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1993
- Microstructural degradation during Zn diffusion in a GaInAsP/InP heterostructure: Layer mixing, misfit dislocation generation, and Zn3P2 precipitationJournal of Applied Physics, 1992
- Orientation dependence of S, Zn, Si, Te, and Sn doping in OMCVD growth of InP and GaAs: application to DH lasers and lateral p—n junction arrays grown on non-planar substratesJournal of Crystal Growth, 1991
- High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor depositionJournal of Applied Physics, 1990
- Zinc doping in InP grown by atmospheric pressure metalorganic vapor phase epitaxyJournal of Crystal Growth, 1990
- Structural relationship between epitaxially-grown Zn3P2 and InP substratesMaterials Letters, 1984
- A study of p-type dopants for InP grown by adduct MOVPEJournal of Crystal Growth, 1984
- Electrical properties of epitaxial indium phosphide films grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1981
- Diffusion and solubility of zinc in indium phosphideSolid-State Electronics, 1964