Substrate orientation effects on dopant incorporation in InP grown by metalorganic chemical vapor deposition

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Abstract
We have investigated the doping incorporation and activation of InP growth using metalorganic chemical vapor deposition on 3)2Zn] and diethylzinc [(C2H5)2Zn], S from hydrogen sulfide [H2S], Si from silane [SiH4], and Sn from tetraethyltin [(C2H5)4Sn]. The incorporation and activation of the p‐type dopant Zn are elevated on the n‐type dopants (S, Si, and Sn). The n‐type dopant Sn has similar incorporation and activation on the various substrate orientations studied. Anomalous Zn doping on the higher order planes 19 cm−3 were measured, and the corresponding activated Zn level was as high as 5.4×1018 cm−3 on a p‐type dopant Zn into the S‐doped n‐type InP substrate is inhibited by a high S‐doping level and segregates at the substrate–epilayer interface. If the S‐doping level is lower than the Zn concentration, then Zn diffuses deep into the substrate at a uniform level.