10GHz 3-stage monolithic 4dB noise figure amplifier

1 January 1982

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. XXV, 140-141
https://doi.org/10.1109/isscc.1982.1156416

Abstract

This paper will describe an X-band amplifier with a 29.7dB gain and 4.0dB noise figure. Amplification is provided by three identical 300μm gate-width, 0.5μm gate-length FETs operated in a common-source configuration.

Keywords

NOISE FIGURE
FETS
CAPACITORS
GALLIUM ARSENIDE
GOLD
CIRCUIT NOISE
PROPAGATION LOSSES
SHUNT (ELECTRICAL)
MMICS
MONOLITHIC INTEGRATED CIRCUITS

This publication has 1 reference indexed in Scilit:

20-GHz Band Monolithic GaAs FET Low-Noise Amplifier
IEEE Transactions on Microwave Theory and Techniques, 1981