20-GHz Band Monolithic GaAs FET Low-Noise Amplifier
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 29 (1) , 1-6
- https://doi.org/10.1109/tmtt.1981.1130277
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- A 10-Watt, C-Band FET Amplifier for TWTA ReplacementPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Power GaAs MESFETs with a Graded Recess StructureJapanese Journal of Applied Physics, 1980
- GaAs Power MESFET's: Design, Fabrication, and PerformanceIEEE Transactions on Microwave Theory and Techniques, 1979
- X-band monolithic GaAs push-pull amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- Microwave GaAs FET monolithic circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1979
- K-band f.e.t. amplifiersElectronics Letters, 1977
- Submicron Single-Gate and Dual-Gate GaAs MESFET's with Improved Low Noise and High Gain PerformanceIEEE Transactions on Microwave Theory and Techniques, 1976
- Coupling Errors in Cavity-Resonance Measurements on MIC Dielectrics (Short Papers)IEEE Transactions on Microwave Theory and Techniques, 1973
- SEARCH FOR RESONANCE BEHAVIOR IN THE MICROWAVE DIELECTRIC CONSTANT OF GaAsApplied Physics Letters, 1967
- Transmission-Line Properties of Parallel Strips Separated by a Dielectric SheetIEEE Transactions on Microwave Theory and Techniques, 1965