Channeling studies of deuterium: Defect interactions in vanadium
- 15 February 1984
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (4) , 871-876
- https://doi.org/10.1063/1.333184
Abstract
The lattice location of deuterium absorbed (VD0.008) or implanted in vanadium has been studied by channeling experiments. Deuterium is found in the tetrahedral sites for thermally doped specimens and in displaced tetrahedral sites (0.36 Å towards the octahedral sites) for implantation doped specimens. The difference in the lattice location is explained by the presence of trapping centers after deuterium implantation.This publication has 26 references indexed in Scilit:
- Hydrogen-monovacancy interactions in the noble metalsScripta Metallurgica, 1982
- Interaction of Hydrogen with Defects in Metals: Interplay between Theory and ExperimentPhysical Review Letters, 1982
- Energetics of hydrogen in aluminumPhysical Review B, 1981
- Deuterium enrichment during ion bombardment in VD0.01 alloysNuclear Instruments and Methods, 1980
- Defect trapping of ion-implanted deuterium in FeJournal of Applied Physics, 1979
- Lattice location and trapping of hydrogen implanted in FCC metalsPhysics Letters A, 1979
- Point defect-solute interactions in metalsJournal of Nuclear Materials, 1978
- Trapping of hydrogen isotopes in molybdenum and niobium predamaged by ion implantationJournal of Applied Physics, 1977
- A study of hydrogen implanted in aluminiumPhysics Letters A, 1976
- Deuterium Lattice Location in Cr and WPhysical Review Letters, 1974