1.3 µm GaInAsP lasers integrated with butt-coupledwaveguide andhigh reflective semiconductor/air Bragg reflector (SABAR)

30 April 1998

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 34 (9) , 882-884
https://doi.org/10.1049/el:19980663

Abstract

The design and demonstration of a novel integrated laser with a butt-coupled waveguide and a semiconductor/air Bragg reflector (SABAR) are presented. The SABAR is loaded into the butt-coupled waveguide to reduce the diffraction loss. Experimentally obtained SABAR reflectivity is estimated to be > 90%. The butt-coupled interface and SABAR are successfully formed, resulting in low threshold GaInAsP integrated lasers.

Keywords

This publication has 5 references indexed in Scilit:

Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors
IEEE Photonics Technology Letters, 1997
A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors
Japanese Journal of Applied Physics, 1996
Low threshold current density operation of GaInAsP-InP laser with multiple reflector microcavities
IEEE Photonics Technology Letters, 1995
High temperature operation of 1.3 μm GaInAsP/Inp GRINSCH strained-layer quantum well lasers
Electronics Letters, 1993
Tapered waveguide InGaAs/InGaAsP multiple-quantum-well lasers
IEEE Photonics Technology Letters, 1990