Minority-carrier lifetime in GaAs thin films
- 15 August 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (7) , 598-599
- https://doi.org/10.1063/1.99867
Abstract
Double-heterostructure devices of type AlxGa1−xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p-type GaAs is measured by photoluminescence and found to be 32 ns at the 5×1016 cm−3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.Keywords
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