A model for analyzing the interface properties of a semiconductor-insulator-semiconductor structure. II. Transient capacitance technique
- 1 July 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 39 (7) , 1747-1751
- https://doi.org/10.1109/16.141242
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Studies of defects and buried oxides in SIMOX based SOI materialsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Bulk traps in ultrathin SIMOX MOSFET's by current DLTSIEEE Electron Device Letters, 1988
- Deep level transient spectroscopy studies of epitaxial silicon layers on silicon-on-insulator substrates formed by oxygen implantationApplied Physics Letters, 1987
- Characterization of surface states in MOS capacitors by a modified DLTS techniquePhysica Status Solidi (a), 1983
- On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopyJournal of Applied Physics, 1982
- Temperature and energy dependences of capture cross sections at surface states in Si metal-oxide-semiconductor diodes measured by deep level transient spectroscopyJournal of Applied Physics, 1981
- Bulk traps in silicon-on-sapphire by conductance DLTSIEEE Transactions on Electron Devices, 1981
- Energy-resolved DLTS measurement of interface states in MIS structuresApplied Physics Letters, 1979
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967