Growth of crack-free hexagonal GaN films on Si(100)
- 3 September 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (10) , 1459-1461
- https://doi.org/10.1063/1.1400770
Abstract
Hexagonal GaN films have been grown on Si(100) substrates by employing a sputtered AlN buffer layer followed by another high-temperature metalorganic chemical vapor deposition (MOCVD) grown AlN buffer layer. The highly oriented structure of sputtered AlN provides a hexagonal template for subsequent AlN and GaN growth. The GaN films are evaluated by transmission electron microscopy, selected area electron diffraction, x-ray diffraction, and photoluminescence and exhibit a purely hexagonal columnar structure. The orientation of the GaN columns depends on the thickness of both the sputtered AlN buffer layer and the MOCVD grown AlN buffer layer. The surface of GaN films is shiny and crack free up to a thickness of 2 μm studied in this work.Keywords
This publication has 13 references indexed in Scilit:
- The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTsIEEE Electron Device Letters, 2000
- GaN epilayers grown on 100 mm diameter Si(111) substratesSolid-State Electronics, 2000
- Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substratesApplied Physics Letters, 2000
- High electron mobility AlGaN/GaN heterostructure on (111) SiApplied Physics Letters, 2000
- High quality GaN grown on Si(111) by gas source molecular beam epitaxy with ammoniaApplied Physics Letters, 1999
- High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substratesIEEE Electron Device Letters, 1999
- GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1998
- Commercial blue LDs a step closer for NichiaIII-Vs Review, 1998
- Visible-blind GaN Schottky barrier detectors grown on Si(111)Applied Physics Letters, 1998
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994