Optimum design of delta -doped InGaAs avalanche photodiode by using quasi-ionization rates
- 1 July 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 8 (7) , 1046-1050
- https://doi.org/10.1109/50.56405
Abstract
No abstract availableKeywords
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