High-performance AlGaAs/GaAs SDHTs and ring oscillators grown by MBE on Si substrates
- 1 December 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (12) , 559-561
- https://doi.org/10.1109/55.43139
Abstract
High-performance AlGaAs/GaAs selectively doped heterojunction transistors (SDHTs) and 19-stage oscillators fabricated on silicon substrates are discussed. Epitaxial layers of AlGaAs/GaAs were grown by MBE on Si substrates. The mobility of two-dimensional electron gas (2DEG) in the SDHTs was as high as 53000 cm/sup 2//V-s at 77 K for a sheet charge density of 10*1/sup 12/ cm/sup -2/. For 1- mu m-gate-length devices, maximum transconductances of 220 and 364 mS/mm were measured at 300 and 77 K, respectively, for the SDHTs. A minimum propagation delay time of 27 ps/stage at room temperature was obtained for a 19-stage direct-coupled FET logic ring oscillator with a power dissipation of 1.1 mW/stage. The propagation delay time was reduced to 17.6 ps/stage at 77 K. From microwave S-parameter measurements at 300 K, current gain and power gain cutoff frequencies of 15 and 22 GHz, respectively, were measured. These results are comparable to those obtained for SDHT technology on GaAs substrates.This publication has 9 references indexed in Scilit:
- GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substratesElectronics Letters, 1988
- GaAs avalanche photodiodes and the effect of rapid thermal annealing on crystalline quality of GaAs grown on Si by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1987
- Ion-implantation and activation behavior of Si in MBE-Grown GaAs on Si substrates for GaAs MESFET'sIEEE Electron Device Letters, 1987
- GaAs E/D MESFET 1-kbit static RAM fabricated on silicon substrateIEEE Electron Device Letters, 1987
- Performance of quarter-micron GaAs metal-semiconductor field-effect transistors on Si substratesApplied Physics Letters, 1986
- Properties of MODFET's grown on Si substrates at DC and microwave frequenciesIEEE Transactions on Electron Devices, 1986
- Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrateApplied Physics Letters, 1985
- GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxyApplied Physics Letters, 1985
- Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) siliconElectronics Letters, 1984