Properties of MoSi2 and WSi2, magnetron cosputtered from elemental targets
- 1 November 1982
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 11 (6) , 1023-1036
- https://doi.org/10.1007/bf02658914
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- 1 /spl mu/m MOSFET VLSI technology. VII. Metal silicide interconnection technology - A future perspectiveIEEE Journal of Solid-State Circuits, 1979
- A New MOS Process Using MoSi2as a Gate MaterialJapanese Journal of Applied Physics, 1978
- Calculation of stress in electrodeposits from the curvature of a plated stripJournal of Research of the National Bureau of Standards, 1949