Nanocrystal formation in Si implanted thin SiO2 layers under the influence of an absorbing interface
- 1 August 2003
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 101 (1-3) , 49-54
- https://doi.org/10.1016/s0921-5107(02)00711-0
Abstract
No abstract availableKeywords
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