Estimation of heat transfer in SOI-MOSFETs
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (4) , 871-875
- https://doi.org/10.1109/16.75217
Abstract
This paper describes and quantifies heat flow in MOSFET's built on SIMOX wafers. SOI structures are examined numerically to show the influence of connection lines and different materials on the heat transport. Correct boundary conditions for device simulation and analytical expressions for compact models are derived. Bulk and SOI technologies are comparedKeywords
This publication has 3 references indexed in Scilit:
- Electrical transient study of negative resistance in SOI MOS transistorsElectronics Letters, 1990
- High quality silicon-on-insulator substrates by implanted oxygen ionsMaterials Science and Engineering: B, 1989
- Physical origin of negative differential resistance in SOI transistorsElectronics Letters, 1989