Isoelectronic traps in GaAs0.6P0.4 by nitrogen implantation and CO2-laser annealing
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9) , 696-698
- https://doi.org/10.1063/1.91258
Abstract
A continuous CO2 laser was used for the first time to anneal the damage in GaAs0.6P0.4 induced during nitrogen implantation and to create nitrogen isoelectronic traps. Laser‐annealed samples showed isoelectronic signals which are by a factor of 6–7 stronger as compared with thermally annealed samples. The intensity of the nitrogen‐induced emission from the laser‐annealed samples was up to 50% higher than that of the near‐band‐gap emission from the starting material.Keywords
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