Photoluminescence of nitrogen-implanted GaAs1−xPx
- 1 February 1974
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (2) , 974-976
- https://doi.org/10.1063/1.1663358
Abstract
Nitrogen has been implanted in GaAs1−xPx crystals of direct (x=0.37) and indirect (x=0.50) compositions. Photoluminescence spectra for the implanted material are consistent with previously reported results for GaAs1−xPx with N incorporated during growth. Implantations were performed at 200 keV with fluences sufficient to produce calculated peak N concentrations in the range 1017−1019 cm−3. Samples heated to 200 °C during implantation exhibit improved annealing properties above 800 °C compared with room‐temperature implantations.This publication has 16 references indexed in Scilit:
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