Isoelectronic trap transitions in GaAs1−xPx:N in the region of resonant enhancement (ENN ∼ EΓ, 0.3<x<0.4)
- 15 March 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 12 (6) , 489-493
- https://doi.org/10.1016/0038-1098(73)90640-6
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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