Spontaneous and stimulated photoluminescence on nitrogen A-line and NN-pair line transitions in GaAs1−x Px : N

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Abstract
In accord with recent absorption measurements, photoluminescence measurements on crystals grown from a Ga solution, as well as on some vapor epitaxial crystals, indicate that the A line in GaAs1−x Px : N is higher in energy than formerly believed. Also, the NN‐pair emission peak (ENN) has been determined more accurately relative to the A‐line peak (EN), and relative to EΓ and Ex. For crystal composition x less than 0.9, only a single NN‐pair emission band is observed with ENN = EΓ at x ≈ 0.30. The A‐line is broad (⩾ 50 Å) with EN = EΓ at x ≈ 0.40. For EN ≈ EΓ or ENN ≈ EΓ the recombination probability on transitions involving N traps may be resonantly enhanced. If EΓ is close to or degenerate with EN or ENN, carrier reemission from N traps to the conduction band is fast, and stimulated emission involving N or NN trap centers can lead to line narrowing because the excess electron population can readjust rapidly between trap centers and the Γ conduction band.