The ν(Si-H) absorption band as a sensor of the oxidation of a silicon carbide surface: Spectrometric and Ab initio studies
- 28 February 1995
- journal article
- Published by Elsevier in Nanostructured Materials
- Vol. 5 (2) , 179-192
- https://doi.org/10.1016/0965-9773(95)00013-5
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Reactivity of silicon carbide and carbon with oxygen in thermostructural compositesCarbon, 1993
- Effects of α-silicon nitride powder processing on surface oxidation kineticsJournal of Materials Research, 1993
- Nanophase materials assembled from atom clustersMaterials Science and Engineering: B, 1993
- Characterization and catalytic activity of silicon carbide powder as catalyst support in exhaust catalystsApplied Catalysis B: Environment and Energy, 1992
- Atomic configurations and local order in laser-synthesized Si, Si-N, Si-C, and Si-C-N nanometric powders, as studied by x-ray-induced photoelectron spectroscopy and extended x-ray-absorption fine-structure analysisJournal of Applied Physics, 1992
- Oxidation Instability of SiC and Si3 N 4 Following Thermal ExcursionsJournal of the Electrochemical Society, 1991
- Infrared absorption of?-SiC particles prepared by chemical vapour depositionJournal of Materials Science, 1990
- FT-IR characterization of SiH bonds on the surface of silicon carbide.Journal of Molecular Structure, 1988
- Laser synthesis of ultrafine powdersCeramics International, 1987
- The SiH band as surface “probe”Journal of Molecular Structure, 1982