Electrical Characteristics of Schottky Contacts on GaN and Al0.11Ga0.89N
- 1 April 2000
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 39 (4B) , L351-353
- https://doi.org/10.1143/jjap.39.l351
Abstract
The electrical characteristics of Ag, Ti, Au, Pd and Ni Schottky contacts on GaN and Al0.11Ga0.89N grown by metalorganic chemical vapour deposition (MOCVD) on sapphire substrates have been investigated. Al0.11Ga0.89N Schottky barrier height values are bit higher than the values of GaN contacts except Ti Schottky contacts. Fermi-level pinning has been observed for both GaN and Al0.11Ga0.89N Schottky contacts. The pinning degree of GaN and Al0.11Ga0.89N are much less than GaAs, Si and GaP, but both of them may be similar to CdS.Keywords
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