Simple interpretation of metal/wurtzite–GaN barrier heights
- 15 July 1999
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 86 (2) , 1170-1171
- https://doi.org/10.1063/1.370861
Abstract
Photoemission data for the dependence of the Schottky barrier height on the metal work function, for n-type wurtzite GaN, are discussed in terms of the Cowley–Sze model [J. Appl. Phys. 36, 3212 (1965)] for a uniform density of surface states in the band gap. It is suggested that, in the context of this model, such barrier heights can be expressed largely as a sum of the “bare-surface barrier height” (i.e., the band bending before contact formation) and a Mott–Schottky term.This publication has 14 references indexed in Scilit:
- Surface states and Fermi-level pinning at clean and Al covered GaN surfacesPhysical Review B, 1999
- Study of the growth of thin Mg films on wurtzite GaN surfacesSurface Science, 1998
- Influence of the exchange reaction on the electronic structure of GaN/Al junctionsPhysical Review B, 1998
- Investigation of the chemistry and electronic properties of metal/gallium nitride interfacesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- A review of the metal–GaN contact technologySolid-State Electronics, 1998
- The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparationApplied Surface Science, 1998
- Structural and electronic properties of ideal nitride/Al interfacesPhysical Review B, 1998
- Barrier heights of GaN Schottky contactsApplied Surface Science, 1997
- Study of oxygen chemisorption on the GaN(0001)-(1×1) surfaceJournal of Applied Physics, 1996
- Surface States and Barrier Height of Metal-Semiconductor SystemsJournal of Applied Physics, 1965