Room temperature oxidation of silicon during and after etching
- 1 April 1965
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 26 (4) , 721-728
- https://doi.org/10.1016/0022-3697(65)90024-7
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- The mechanisms for silicon oxidation in steam and oxygenJournal of Physics and Chemistry of Solids, 1960
- Stain films on siliconJournal of Physics and Chemistry of Solids, 1960
- The adsorption of oxygen on clean silicon surfacesJournal of Physics and Chemistry of Solids, 1960
- The interaction of oxygen with clean silicon surfacesJournal of Physics and Chemistry of Solids, 1958
- Optical Measurement of Film Growth on Silicon and Germanium Surfaces in Room AirJournal of the Electrochemical Society, 1957
- Surface barriers and surface conductancePhysica, 1954
- Surface Properties of GermaniumBell System Technical Journal, 1953
- Theory of the oxidation of metalsReports on Progress in Physics, 1949
- The cause of the colours shown during the oxidation of metallic copperProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1927