Spatial distribution of impurities and defects introduced in diamond by high energy ion implantation
- 16 June 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 95 (2) , K123-K126
- https://doi.org/10.1002/pssa.2210950252
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Results of ion implantation into silicon in the 100 MeV Range: I: Oxygen and boron implantationPhysica Status Solidi (a), 1982
- High Energy As+ Ion Implantation into Si–Arsenic Profiles and Electrical Activation Characteristics–Japanese Journal of Applied Physics, 1981
- Range and range straggling of oxygen implanted into silicon at energies between 2 and 20 MeVApplied Physics A, 1980
- An optical study of the TR12 and 3H defects in irradiated diamondJournal of Physics C: Solid State Physics, 1977
- Optical studies of the 1.945 eV vibronic band in diamondProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1976