Minority carrier lifetimes and lasing thresholds of PbSnTe heterostructure lasers
- 1 November 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 15 (11) , 1266-1270
- https://doi.org/10.1109/jqe.1979.1069924
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Interfacial recombination velocity in GaAlAs/GaAs heterostructuresApplied Physics Letters, 1978
- Approximating the transient response of double-heterojunction devicesJournal of Applied Physics, 1978
- Gain-frequency-current relation for Pb1-xSnxTe double heterostructure lasersIEEE Journal of Quantum Electronics, 1977
- Self-absorption effects on the radiative lifetime in GaAs-GaAlAs double heterostructuresJournal of Applied Physics, 1977
- Interfacial recombination at (AlGa)As/GaAs heterojunction structuresJournal of Applied Physics, 1976
- Lead-tin telluride double-heterojunction laser diodes: Theory and experimentIEEE Journal of Quantum Electronics, 1975
- Characteristics of tunable Pb1−xSnx Te junction lasers in the 8–12-μm regionJournal of Applied Physics, 1973
- Nuclear-Magnetic-Resonance Studies in PbTe and : An Experimental Determination of Band Parameters and Magnetic Hyperfine ConstantsPhysical Review B, 1973
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957