X-ray photoemission study of the Te-precursor surfaces and the initial stages of growth of ZnTe on GaAs (100)
- 23 November 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (21) , 1690-1692
- https://doi.org/10.1063/1.98545
Abstract
The initial stages of epitaxial growth of ZnTe on GaAs (100) have been studied by x-ray photoemission spectroscopy. The two surface structures (6×1 and (3)1/2×3 ) resulting from the adsorption of Te on GaAs (100) were used as precursor for ZnTe growth. Each of these structures is characterized by two different adsorbed Te states. For the 6×1 structure, the two states are assigned to As–Te–As and tentatively to Te–Te–Te bonds; and for the (3)1/2×3 structure, the assigned bonds are As–Te–As and GaGa Te–As. Growth of ZnTe (100) does not induce any change in the bonds associated with the 6×1 structure but modifies that associated with the (3)1/2×3 surface.Keywords
This publication has 12 references indexed in Scilit:
- Control of orientation of CdTe grown on clean GaAs and the reconstruction of the precursor surfacesApplied Physics Letters, 1987
- Surface structure of GaAs with adsorbed TeApplied Physics Letters, 1986
- Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTeApplied Physics Letters, 1986
- (100) and (111) oriented CdTe grown on (100) oriented GaAs by molecular beam epitaxyApplied Physics Letters, 1986
- CdTe-GaAs(100) interface: MBE growth, rheed and XPS characterizationSurface Science, 1986
- Interface structure in heteroepitaxial CdTe on GaAs(100)Surface Science, 1986
- Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAsApplied Physics Letters, 1986
- Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAsApplied Physics Letters, 1986
- High resolution electron microscope study of epitaxial CdTe-GaAs interfacesApplied Physics Letters, 1985
- Study of the initial stages of growth of CdTe on (001)GaAsApplied Physics Letters, 1984