Rie-induced damage in MOS structures
- 30 November 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (11) , 1419-1423
- https://doi.org/10.1016/0038-1101(90)90116-v
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Interface state density measurement in MOS structures by analysis of the thermally stimulated conductanceSolid-State Electronics, 1990
- Damage to the Silicon Lattice by Reactive Ion EtchingJournal of the Electrochemical Society, 1988
- Ion Transport Phenomena in Insulating FilmsJournal of Applied Physics, 1965