DC conduction and low-frequency noise characteristics of GaAlAs/GaAs single heterojunction bipolar transistors at room temperature and low temperatures
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Microwave Theory and Techniques
- Vol. 39 (6) , 1054-1058
- https://doi.org/10.1109/22.81681
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Electrical properties of GaAs/InGaAs high electron mobility transistorsInternational Journal of Electronics, 1990
- Transport and noise in GaAs/AlGaAs heterojunction bipolar transistors. II. Noise and gain at low frequenciesIEEE Transactions on Electron Devices, 1989
- GaAs heterojunction bipolar transistor device and IC technology for high-performance analog and microwave applicationsIEEE Transactions on Microwave Theory and Techniques, 1989
- Location of 1/f noise sources in BJT's—II. ExperimentIEEE Transactions on Electron Devices, 1987
- FLICKER NOISE DUE TO MINORITY CARRIER TRAPPING IN THE BULK OF BIPOLAR TRANSISTORSPublished by Elsevier ,1986
- CURRENT NOISE IN GaAlAs/GaAs HETEROJUNCTION BIPOLAR TRANSISTORSPublished by Elsevier ,1986
- 1/f noise in n+-p-n microwave transistorsSolid-State Electronics, 1985
- Proposed discrimination between 1/f noise source in transistorsSolid-State Electronics, 1982
- 1/f noisePhysica B+C, 1976
- Effects of diffusion-induced dislocations on the excess low-frequency noiseIEEE Transactions on Electron Devices, 1973