Silicon Carbide Epitaxial Layers Grown ON SiC Wafers With Reduced Micropipe Density
- 1 January 1998
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Overview of SiC power electronicsDiamond and Related Materials, 1997
- 4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device StructuresMRS Proceedings, 1997