Modification of semiconductors with proton beams. A review
- 1 February 2000
- journal article
- review article
- Published by Pleiades Publishing Ltd in Semiconductors
- Vol. 34 (2) , 123-140
- https://doi.org/10.1134/1.1187921
Abstract
Analysis is given of the progress in the modification of semiconductors by proton beams in fields such as proton-enhanced diffusion, ion-beam mixing, and formation of porous layers. This method of modification (doping) is shown to have high potential in monitoring the properties of semiconductor materials and designing devices of micro and nano electronics as compared to the conventional doping techniques such as thermal diffusion, epitaxy, and ion implantation.Keywords
This publication has 48 references indexed in Scilit:
- Ion beam mixing of Fe thin film and Si substrateNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1995
- Picosecond diffusion in a thermal spike during ion mixingNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Thermal and ion induced silicide formationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Diffusion of impurities from implanted silicon layers by rapid thermal annealingPhysica Status Solidi (a), 1988
- The influence of secondary radiation defects on the redistribution of impurity ions due to high temperature proton irradiationRadiation Effects and Defects in Solids, 1988
- Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structuresNuclear Instruments and Methods, 1981
- Theory of implantation recoil atomsPhysica Status Solidi (a), 1980
- Uphill diffusion mechanism in proton-irradiated siliconApplied Physics Letters, 1980
- Non-metallic solids. Vacancy enhanced diffusion in silicon. Effects of irradiation and of chemical impuritiesDiscussions of the Faraday Society, 1961
- Radiation Enhanced Diffusion in SolidsJournal of Applied Physics, 1958