The dependence of the resistance profile in silicon irradiated with hydrogen and helium ions on the ion energy and fluence
- 16 September 1980
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 61 (1) , K77-K79
- https://doi.org/10.1002/pssa.2210610158
Abstract
No abstract availableThis publication has 1 reference indexed in Scilit:
- Distribution of radiation defects in silicon irradiated with fast charged particlesPhysica Status Solidi (a), 1971