High-purity GaSb epitaxial layers grown from Sb-rich solutions
- 15 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (3) , 239-240
- https://doi.org/10.1063/1.102842
Abstract
Undoped GaSb crystals with mirror-like surfaces were obtained by liquid phase epitaxy from Sb-rich solutions. The background carrier concentration strongly depended on the growth temperature. By growing crystals below 600 °C, we can obtain a GaSb crystal with a background carrier concentration under 1016 cm−3. Photoluminescence studies showed that native defects related to Sb vacancies were significantly reduced in the GaSb crystal.Keywords
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