An integrated magnetic sensor : the silicon on sapphire Schottky magnetodiode
- 1 January 1980
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 41 (9) , 235-237
- https://doi.org/10.1051/jphyslet:01980004109023500
Abstract
The Schottky magnetodiode is the combination of two basic phenomena : the magnetodiode effect in double-injecting P+ NN+ structures and the effect of the carrier density modulation on the Schottky reverse current. Our devices, realized in SOS technology, denote magnetosensitivities of about 10 V/T. We investigate the influence of the geometrical parameters, injection rate and doping level in order to improve the device sensitivityKeywords
This publication has 6 references indexed in Scilit:
- Magnetodiode model with gradation of lifetime and mobilityPhysica Status Solidi (a), 1979
- Non uniform recombination in thin silicon-on-sapphire filmsSolid-State Electronics, 1978
- An ESFI sos magnetodiodePhysica Status Solidi (a), 1977
- Capteur magnétique de très grande sensibilité à sonde SchottkyRevue de Physique Appliquée, 1977
- Magnetodiode modelSolid-State Electronics, 1972
- Magnétorésistance anormale par effet de surface dans les semiconducteurs. Réponse en fréquence et durée de vie effective des porteursRevue de Physique Appliquée, 1971