Fatal electromigration voids in narrow aluminum-copper interconnect
- 2 November 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (18) , 2170-2172
- https://doi.org/10.1063/1.108284
Abstract
The shape and crystallography of fatal electromigration voids in near-bamboo Al-2 wt % Cu thin-film conductors were studied with transmission electron microscopy. Fatal voids were typically slit shaped and intragranular. Voids formed with {111} faces and with the slit length parallel to a 〈022〉 direction. The void faces were inclined and resided in grains of varying surface crystallographic orientation. Void morphology was independent of initial precipitate condition.Keywords
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