Waveguide In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode
- 1 April 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 12 (4) , 416-418
- https://doi.org/10.1109/68.839037
Abstract
A high-speed waveguide In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As separate absorption, charge, and multiplication avalanche photodiode suitable for operation at 1.55 /spl mu/m has been demonstrated, a unity-gain bandwidth of 27 GHz was achieved with a gain-bandwidth product of 120 GHz.Keywords
This publication has 11 references indexed in Scilit:
- Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHzIEEE Photonics Technology Letters, 1999
- Thin multiplication region InAlAs homojunction avalanche photodiodesApplied Physics Letters, 1998
- High-speed InGaAs/InAlGaAs/InP waveguide-integratedMSM photodetectors for 1.3 – 1.55 µm wavelength rangeElectronics Letters, 1998
- Resonant-cavity separate absorption, charge and multiplication avalanche photodiodes with high-speed and high gain-bandwidth productIEEE Photonics Technology Letters, 1998
- Waveguide AlInAs/GaAlInAs avalanche photodiode witha gain-bandwidthproduct over 160 GHzElectronics Letters, 1997
- Travelling-wave photodetectors with 172-GHz bandwidth and 76-GHz bandwidth-efficiency productIEEE Photonics Technology Letters, 1995
- 110-GHz, 50%-efficiency mushroom-mesa waveguide p-i-n photodiode for a 1.55-/spl mu/m wavelengthIEEE Photonics Technology Letters, 1994
- 50 GHz InGaAs edge-coupled pin photodetectorElectronics Letters, 1991
- Resonant cavity-enhanced (RCE) photodetectorsIEEE Journal of Quantum Electronics, 1991
- Impact ionization rates in (100) A1 0.48 In 0.52 AsIEEE Electron Device Letters, 1990