High performance InGaAsP/InP lasers on Si substrates
- 29 September 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (20) , 1680-1681
- https://doi.org/10.1049/el:19941149
Abstract
The performance of 1.3 µm InGaAsP buried heterostructure lasers with both n- and p-type contacts fabricated on one side is discussed. The lasers are flipchip bonded to Si wafers. The DC characteristics of the laser (Ith ≃ 12–15 mA, η = 0.19 mA/mW) are identical to those obtained on conventional metal heatsinks. The modulation bandwidth exceeds 3 GHz at a bias current of 20 mA. A bandwidth of 1.5 GHz can be obtained at a current of only 3 mA above threshold. The flipchip bonded lasers are shown to be stable up to at least 65°C.Keywords
This publication has 4 references indexed in Scilit:
- Strained quaternary quantum well lasers for high temperature operationApplied Physics Letters, 1993
- Semiconductor lasers on Si substrates using the technology of bonding by atomic rearrangementApplied Physics Letters, 1993
- III–V on Si: heteroepitaxy versus lift-off techniquesJournal of Crystal Growth, 1993
- High-speed InGaAsP/InP multiple-quantum-well laserIEEE Photonics Technology Letters, 1992