Interface states of the Si/SiO2 system and their separation in groups
- 16 September 1977
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 43 (1) , K99-K101
- https://doi.org/10.1002/pssa.2210430166
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Interface States Induced by Amorphous SiO2 in MOS StructuresJournal of the Physics Society Japan, 1977
- Character of Si-SiO2 interface states from analysis of the CV term spectraPhysica Status Solidi (a), 1976
- Spectrum and nature of surface statesSurface Science, 1974
- On the nature of recombination centres of the Si-SiO2 interfacePhysica Status Solidi (a), 1974
- Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO2InterfaceJapanese Journal of Applied Physics, 1973
- Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurementsSurface Science, 1971