High-mobility vertical transport in graded-gap GaAs/AlGaAs superlattices
- 1 November 1987
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (11) , 705-709
- https://doi.org/10.1088/0268-1242/2/11/001
Abstract
In compositionally graded superlattices, grown by molecular beam epitaxy, the carrier mobilities in the direction perpendicular to the layers have been experimentally estimated in an 'all-optical' experiment. Mobilities in low-period graded-gap superlattices are estimated to be greater than those of AlGaAs graded-gap alloys.Keywords
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