An intermediate (1.0–1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy
- 15 May 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 352-354, 646-650
- https://doi.org/10.1016/0039-6028(95)01220-6
Abstract
No abstract availableKeywords
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