Practical antireflection coatings for metal-semiconductor solar cells
- 1 September 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (9) , 4107-4112
- https://doi.org/10.1063/1.323270
Abstract
The metal‐semiconductor solar cell is a potential candidate for converting solar energy to electrical energy for space and terrestrial application. In this paper, a method for obtaining parameters of practical antireflection (AR) coatings for the metal‐semiconductor solar cells is given. This method utilizes the measured equivalent index of refraction obtained from ellipsometry, since the surface to be AR coated has a multilayer structure. Both the experimental results and theoretical calculations of optical parameters for Ta2O5 AR coatings on Au‐GaAs and Au‐GaAs0.78P0.22 solar cells are presented for comparison.This publication has 5 references indexed in Scilit:
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- The role of the interfacial layer in metal−semiconductor solar cellsJournal of Applied Physics, 1975
- Schottky Barrier Photodiodes with Antireflection CoatingBell System Technical Journal, 1966
- The Structure of Evaporated Metal Films and Their Optical PropertiesJournal of the Optical Society of America, 1950
- Über optische Konstanten, elektrischen Widerstand und Struktur dünner MetallschichtenAnnalen der Physik, 1938