Low excess noise characteristics in thin avalancheregion GaAs diodes
- 8 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (1) , 125-126
- https://doi.org/10.1049/el:19980021
Abstract
Avalanche noise measurements have been performed on a range of homojunction GaAs p+-i-n+ and n+-i-p+ diodes with avalanche widths w ranging from 1.13 to 0.050 µm. These noise measurements show that, contrary to McIntyre's avalanche noise theory, there is large reduction in the avalanche noise as w is decreased for both electron and hole initiated impact ionisation.Keywords
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