The incorporation of oxygen into InAlAs, the role of trimethylindium (TMI)
- 1 January 1994
- journal article
- other
- Published by Elsevier in Journal of Crystal Growth
- Vol. 135 (1-2) , 365-366
- https://doi.org/10.1016/0022-0248(94)90764-1
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- The effects of oxygen on the electronic and optical properties of AlInAs layers lattice-matched to InP substrates grown by atmospheric-pressure metal-organic chemical vapor depositionJournal of Applied Physics, 1993
- Purity and purification of source materials for III–V MOCVDJournal of Crystal Growth, 1988