The effects of oxygen on the electronic and optical properties of AlInAs layers lattice-matched to InP substrates grown by atmospheric-pressure metal-organic chemical vapor deposition

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Abstract
AlInAs layers lattice‐matched to InP substrates were grown by atmospheric‐pressure metal‐organic chemical vapor deposition. The residual oxygen concentration determined by secondary ion mass spectrometry ranged from 3×1016 to 3×1019 cm−3, and was high when the growth temperature was low or the V/III ratio was low. The oxygen concentration and the residual carrier concentration showed the same dependence on the V/III ratio in the high V/III ratio region. This suggests that oxygen is the origin of the residual carrier concentration. Strong correlations between the oxygen concentration and the photoluminescence intensity and reverse current through Schottky diodes suggest that oxygen creates generation‐recombination centers in AlInAs layers.