Electronic States of Ionized Impurity-Pairs in Silicon
- 1 January 1967
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 22 (1) , 118-127
- https://doi.org/10.1143/jpsj.22.118
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Far-Infrared Absorption in-Type Silicon Due to Photon-Induced HoppingPhysical Review Letters, 1965
- Effective-Mass Theoretical Approach to Optical and Microwave Phenomena in Semiconductors I. Zeeman Effect of Acceptors in Si and GeJournal of the Physics Society Japan, 1964
- Microwave Absorption in Silicon at Low TemperaturesPhysical Review B, 1964
- Spin and combined resonance on acceptor centres in Ge and Si type crystals—IJournal of Physics and Chemistry of Solids, 1963
- Theory of shallow acceptor states in Si and GeJournal of Physics and Chemistry of Solids, 1962
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956
- Theory of Donor States in SiliconPhysical Review B, 1955
- Motion of Electrons and Holes in Perturbed Periodic FieldsPhysical Review B, 1955