Changes in electrical device characteristics during the in situ formation of dislocations
- 22 March 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (12) , 1426-1428
- https://doi.org/10.1063/1.108649
Abstract
By adding electrical connections to a specimen heating holder for a transmission electron microscope (TEM), we have measured the characteristics of electronic devices, such as diodes, while they remain under observation. We have made TEM specimens from metastable GeSi/Si p‐n junction diodes and introduced dislocations by heating in situ. We describe the changes in the electrical properties of these devices as dislocations form. We find that a generation‐recombination process does not explain our results and instead, suggest a model based on the creation of point defects or the diffusion of metals during the formation of dislocations.Keywords
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